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PD - 93793A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) IRHF54Z30 IRHF58Z30 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.045 0.045 0.045 0.056 ID 12A* 12A* 12A* 12A*
IRHF57Z30 30V, N-CHANNEL
4#
TECHNOLOGY
c
TO-39
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre and Post Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by internal wire diameter For footnotes refer to the last page 12* 10 48 25 0.2 20 520 12 2.5 3.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical)
g
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1
10/17/01
IRHF57Z30
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 12 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.03 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.045 4.0 -- 10 25 100 -100 65 20 10 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 10A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 10A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 15V VDD = 15V, ID = 12A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2055 936 35
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12* 48 1.5 92 194
Test Conditions
A
V ns nC Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 5.0 175
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF57Z30
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.024 0.045 1.5 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 10 0.03 0.056 1.5 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS =0V VGS =12V, ID =10A VGS =12V, ID =10A VGS = 0V, IS =12A
1. Part numbers IRHF57Z30, IRHF53Z30 and IRHF54Z30 2. Part number IRHF58Z30
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.4 80.3 Energy (MeV) 255 290 313 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 33.4 30 30 30 25 20 28.8 25 25 20 15 10 26.5 22.5 22.5 15 10 --
35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57Z30
Pre-Irradiation
1000
100
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
5.0V
5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
I D , Drain-to-Source Current (A)
1.5
100
TJ = 150 C
1.0
10
0.5
1 5 7 9
15
V DS = 15V 20s PULSE WIDTH 11 13 15
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHF57Z30
3500
3000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 12A
VDS = 24V VDS = 15V
16
C, Capacitance (pF)
2500
2000
Ciss C oss
12
1500
8
1000
4
500
C rss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50 60
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
TJ = 25 C
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
ID, Drain-to-Source Current (A)
100s
10
1ms
1
10ms Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100
0.1 0.4
V GS = 0 V
0.8 1.2 1.6 2.0 2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHF57Z30
Pre-Irradiation
25
LIMITED BY PACKAGE
20
VDS VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
I D , Drain Current (A)
-VDD
15
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01
1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.01
P DM t1 t2 10
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF57Z30
1500
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
1250
TOP BOTTOM ID 5.4A 9.6A 12A
VD S
L
D R IV E R
1000
RG
D .U .T.
IA S tp
750
+ - VD D
A
VGS 20V
500
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
250
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHF57Z30
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 20V, starting TJ = 25C, L= 7.2 mH Peak IL = 12A, VGS = 12V ISD 12A, di/dt 135A/s, VDD 30V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/01
8
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